Annealing effect on the photoluminescence of Si nanocrystallites thin films

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition (PLD) using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases at the temperature range from 400 to 800 °C. Strong violet-indigo photoluminescence has been...

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Bibliographic Details
Published inMaterials Science & Engineering C Vol. 23; no. 6; pp. 1017 - 1019
Main Authors Jeon, Kyung Ah, Kim, Jong Hoon, Choi, Jin Baek, Han, Kyoung Bo, Lee, Sang Yeol
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.2003
Subjects
Annealing effect
Defect centers
Pulsed laser deposition
Quantum confinement effect
Si nanocrystallites
Pulsed laser deposition
Si nanocrystallites
Quantum confinement effect
Defect centers
Annealing effect
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Summary:Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition (PLD) using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases at the temperature range from 400 to 800 °C. Strong violet-indigo photoluminescence has been observed at room temperature (RT) from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures. As the results of PL and high-resolution transmission electron microscope (HRTEM) measurements, we could suggest that the origin of violet-indigo PL from the films was related to the quantum size effect of Si nanocrystallites.
ISSN:0928-4931
1873-0191
DOI:10.1016/j.msec.2003.09.157