One dimensional polar surface dominated GaN nanostructures with zigzag morphology

• Published in: Journal of alloys and compounds Vol. 674; pp. 16 - 20
• Main Authors: Suo, Guoquan, Li, Jianye
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25.07.2016
• Subjects: Alloys; Chemical vapor deposition; Chemical vapor deposition method; Gallium nitrides; GaN; Morphology; Nanoparticles; Nanostructure; Nanostructures; Optimization; Polar surface; Wire; Nanostructures; Polar surface; Chemical vapor deposition method; GaN
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2016.02.227

One dimensional GaN nanostructures with zigzag morphology have been synthesized in large scale by a simple vapor confined chemical vapor deposition (CVD) method. The wires have length and diameter of about 30 μm and 100 nm respectively. The growth process seems to follow a vapor–liquid–solid (VLS) mechanism as evidenced by Au nanoparticles at the end of the wires. The sides surfaces of the diameter-modulated zigzag nanostructures are composed of polar planes {10-11} or {11-22}. The peculiar morphology may result from the minimization of the electrostatic interaction energy caused by polar surface. •Zigzag GaN nanostructures were synthesized by a simple vapor confined CVD method.•The zigzag wires have length of 30 μm and diameter of 100 nm.•The side surfaces of the zigzag nanostructures are composed of polar planes.