The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300mm) and 18″ (450mm) wafers with the development of 3D full chamber modeling and experimental visual technique

• Published in: International journal of heat and mass transfer Vol. 67; pp. 393 - 397
• Main Authors: Liao, M.-H., Chen, C.-H., Kao, S.-C.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2013
• Subjects: Computer simulation; Convection; Fluid flows; Gallium compounds; Metalorganic chemical vapor deposition; Semiconducting gallium arsenide; Computer simulation; Semiconducting gallium arsenide; Gallium compounds; Convection; Fluid flows; Metalorganic chemical vapor deposition
• ISSN: 0017-9310; 1879-2189
• DOI: 10.1016/j.ijheatmasstransfer.2013.08.038

The thin film deposition property and the process difference during the wafer size migration from 12″ (300mm) to 18″ (450mm) in the Chemical Vapor Deposition (CVD) equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12″ (300mm) to 18″ (450mm) for the industry cost reduction can be achieved. Non-dimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property.