Investigating the effect of buffer layer on magnetoresistance in organic spin-valves

• Published in: Synthetic metals Vol. 176; pp. 92 - 95
• Main Authors: Qin, W., Zhang, Y.B., Xie, S.J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.07.2013; Elsevier
• Subjects: Buffer layer; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Giant magnetoresistance; Magnetic properties and materials; Magnetoresistance; Magnetotransport phenomena, materials for magnetotransport; Manganites; Organic spintronics; Physics; Buffer layer; Magnetoresistance; Organic spintronics; Aluminium oxide; Spin valve; Aluminium compounds; Quinoline derivatives; Giant magnetoresistance; Spin injection; Cobalt; Thickness; Polarized spin; Manganites; Spintronics
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/j.synthmet.2013.06.001

•An optimized buffer layer thickness is got to increase the MR in organic device.•MR can be improved by adjusting the thickness of buffer layer.•Different buffer layer materials are calculated and discussed. According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations.