Recent development of vertical GaN power devices

Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices. Due to the availability of relatively high-quality free-standing bulk GaN substrates, the research and development of vertical GaN devices on GaN substrates has made significant progress in recent years, and v...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. SB; p. SB0805
Main Author Oka, Tohru
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.04.2019
Japanese Journal of Applied Physics
Subjects
Electronic devices
Gallium nitrides
MOSFETs
R&D
Research & development
Schottky diodes
Semiconductor devices
Substrates
Transistors
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Summary:Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices. Due to the availability of relatively high-quality free-standing bulk GaN substrates, the research and development of vertical GaN devices on GaN substrates has made significant progress in recent years, and various transistors and diodes based on vertical GaN with excellent characteristics have been reported. This paper reviews the current status and recent progress of vertical GaN power device development reported from companies and research institutions, which includes the technological development of our recent research results of Schottky barrier diodes and trench MOSFETs. Key remaining issues for practical applications are also described.
Bibliography:JJAP-s100159
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab02e7