Performance and reliability improvement of flash device by a novel programming method

The operating methods of flash memory device are worth studying due to the reliability issue. A novel programming method based on a new current mechanism is developed in this work to improve the performance and reliability of flash memory. Experimental results show that this novel programming method...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 47; no. 6; pp. 967 - 971
Main Authors Ho, Chia-Huai, Chang-Liao, Kuei-Shu, Huang, Ya-Nan, Wang, Tien-Ko, Lu, T.C.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.06.2007
Elsevier
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Gate current
Performance evaluation
Voltage threshold
Injection current
Memory devices
Flash memory
Integrated circuit
Reliability
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Summary:The operating methods of flash memory device are worth studying due to the reliability issue. A novel programming method based on a new current mechanism is developed in this work to improve the performance and reliability of flash memory. Experimental results show that this novel programming method with higher gate current injection efficiency not only increases the operating speed but also improves the reliability. This reliability improvement can be attributed to the reduction of oxide-trap-charge generation and threshold-voltage shift.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2006.06.003