Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In 0.68Ga 0.32As 0.7P 0.3) barriers for high current injection efficiency

• Published in: Journal of crystal growth Vol. 312; no. 15; pp. 2279 - 2283
• Main Authors: Mialichi, J.R., Frateschi, N.C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.07.2010; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Computer simulation; A1. Diffusion; A1. Nanostructures; A3. Chemical beam epitaxy; B2. Semiconducting III–V materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Quantum dots; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thin film structure and morphology; A3. Chemical beam epitaxy; A1. Atomic force microscopy; A1. Computer simulation; B2. Semiconducting III–V materials; A1. Diffusion; A1. Nanostructures; Atomic force microscopy; Gallium; Arsenic; Photoluminescence; Computerized simulation; Nanostructures; Gallium Arsenides phosphides; Indium phosphide; B2. Semiconducting III-V materials; Energy gap; Chemical beam epitaxy; Diffusion; Quantum dots; Phosphorus; Indium; Layer thickness; Indium arsenides; III-V compound; Growth mechanism; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.04.044

We present the growth of stacked layers of InAs quantum dots directly on high bandgap In 0.68Ga 0.32As 0.7P 0.3 ( λ g=1420 nm) barriers. The quaternary material is lattice matched to InP forming a double hetero-structure. Indium flux, number of InAs stacked layers and InGaAsP inner separation layer thickness were investigated. Photoluminescence (PL) and atomic force microscopy (AFM) analysis indicate the occurrence of gallium diffusion and the arsenic/phosphorus (As/P) exchange with the InGaAsP barriers. As a result, shorter wavelength emission is observed, making the structures suitable for telecom applications.