Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

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Bibliographic Details
Published inThin solid films Vol. 517; no. 2; pp. 848 - 852
Main Authors PARK, Il-Mok, JUNG, Jung-Kyu, RYU, Sang-Ouk, CHOI, Kyu-Jeong, YU, Byoung-Gon, PARK, Young-Bae, SEUNG MIN HAN, JOO, Young-Chang
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 28.11.2008
Subjects
Composition and phase identification
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
Physical properties of thin films, nonelectronic
Physics
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thermal stability; thermal effects
Thin film structure and morphology
Thermal stress
Phase-change stress
Crystalline state
Biaxial modulus
Thin films
Finite element method
Hardness testing
Thermal expansion coefficient
Stress effects
Antimony tellurides
Ge2Sb2Te5
Thermal stresses
Phase-change random access memory
Nanohardness
Elastic modulus
Random-access storage
Coefficient of thermal expansion
Phase transformations
Digital simulation
Nanoindentation
Mechanical properties
Amorphous state
Layer thickness
Mechanical stress
Germanium tellurides
Hardness indentation
Finite element analysis
Curvature
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2008.08.194