High efficiency gallium phosphide solar cells using TC-doped absorber layer

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 104; pp. 116 - 123
• Main Authors: Khosroabadi, S., Kazemi, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2018
• Subjects: Efficiency; GaP; Output power; Solar cell; Transition component; Solar cell; Transition component; Output power; Efficiency; GaP
• ISSN: 1386-9477; 1873-1759; 1873-1759
• DOI: 10.1016/j.physe.2018.07.011

In this work, we have investigated the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Transition Compounds-doped Gallium Phosphide (Ga1−XTCXP: TC = V, Mn, Fe, Co, Ni & Cu) as DMS are investigated. Then, a conventional gallium phosphide photovoltaic junction was simulated with a GaP absorber layer as reference cell. Last, a high efficiency gallium phosphide photovoltaic junction was proposed with a Ga1−XTCXP absorber layer. Simulation results showed that by using Ga1−XTCXP compound, the short-circuit current density (JSC) and the conversion efficiency of proposed solar cell increase impressively. Under global AM 1.5 conditions, the proposed cell structure has an open-circuit voltage (VOC) of 1.01 V, JSC of 9.05 mA/cm2 and a fill factor (FF) of 88%; all in all lead to total area conversion efficiency (η) improved to 8.06% which increased about 5.93% compared with a reference cell. •We have investigated the structural and magnetic properties of GaP.•Some significant structural and magnetic properties of Transition Compounds-doped Gallium Phosphide as DMS are investigated.•A conventional gallium phosphide photovoltaic junction has been simulated.•A high efficiency gallium phosphide photovoltaic junction has been proposed with a Ga1−XTCXP absorber layer.