Photoconductivities of Nanocrystalline Vanadium Pentoxide Thin Film Grown by Plasma RF Magnetron Sputtering at Different Conditions of Deposition

• Published in: Physics of the solid state Vol. 62; no. 1; pp. 74 - 82
• Main Authors: Khalaf, M. K., Hassan, N. K., Khudiar, A. I., Salman, I. K.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2020; Springer; Springer Nature B.V
• Subjects: Darkness; Deposition; Detectors; Dielectric films; Illumination; Magnetron sputtering; Metals; Nanocrystals; Photoconductivity; Physics; Physics and Astronomy; Power efficiency; Quantum efficiency; Silicon substrates; Solid State Physics; Spectra; Spectral sensitivity; Thin films; Vanadium; Vanadium pentoxide; photoconductivity; physical vapour deposition; plasma RF sputtering; vanadium pentoxide
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783420010175

In this study, the fabrication and characterization of a metal–semiconductor–metal (MSM) visible photodetector based on V 2 O 5 were investigated. The V 2 O 5 thin film was synthesized on n -type Si (100) as substrate by plasma RF-sputtering. The photoconductivity of the nanocrystalline vanadium pentoxide (V 2 O 5 |Si) was investigated at the different conditions of deposition (i.e., RF-sputtering power, pressure, and substrate temperature). The photoconductivity measurement of this work was performed in the darkness and under illumination, with applied voltage from a range of 0.1–10 V and illumination intensity 9.8 mW/cm 2 . I‒V characteristics under illumination showed that the films prepared from on the basis of n -Si have good efficiency and the best is at power 150 W, pressure 0.03 Torr, and temperature 473 K. The fabricated photoconductive detector showed the spectral response ( R λ ) value of 0.0783 A W –1 , quantum efficiency 18.04%, spectral detectivity D * = 6.984 × 10 9 cm Hz 1/2 W –1 at wavelength 600 nm, and low spectral responsivity in the UV region.