Peltier effect in doped silicon microchannel plates

The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of th...

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Published inJournal of semiconductors Vol. 32; no. 12; pp. 40 - 43
Main Author 慈朋亮 石晶 王斐 徐少辉 杨振亚 杨平雄 王连卫 高晨 朱劁豪
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2011
Subjects
Coefficients
Devices
Microchannel plates
Peltier effect
Peltier效应
Phosphorus
Porosity
Seebeck系数
Semiconductors
Silicon
体硅
塞贝克系数
微通道板
珀尔帖效应
磷掺杂
设备连接
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/32/12/122003

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Summary:The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10^-3 Ω·cm and 1.9 × 10^-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m.K）, respectively.
Bibliography:silicon microchannel plates; doping; thermoelectric; Peltier effect
Ci Pengliang, Shi Jing, Wang Fei, Xu Shaohui , Yang Zhenya, Yang Pingxiong, Wang Lianwei, Gao Chen, and Paul K. Chu（1 Laboratory of Polar Materials and Devices, Ministry of Education, and Department of Electronic Engineering, East China Normal University, Shanghai 200241, China 2Department of Microelectronics, Fudan University, Shanghai 200433, China 3 Department of Physics and Material Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China）
The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10^-3 Ω·cm and 1.9 × 10^-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m.K）, respectively.
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/12/122003