New photoluminescence lines in Vanadium doped GaAs grown by MOVPE

• Published in: Microelectronics Vol. 34; no. 4; pp. 271 - 274
• Main Authors: Bchetnia, A., Rebey, A., El Jani, B., Cernogora, J., Fave, J.-L.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2003; Elsevier
• Subjects: Metalorganic vapour phase epitaxy; Photoluminescence; V-doped GaAs; V-doped GaAs; Photoluminescence; Metalorganic vapour phase epitaxy
• ISSN: 1879-2391; 0026-2692; 1879-2391
• DOI: 10.1016/S0026-2692(02)00195-7

We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15K, by comparison with undoped layers grown in the same conditions, photoluminescence spectra of V-doped exhibited three new emission bands: at 1.41, 1 and 0.72eV. The 1 and 0.72eV band emissions were attributed to V2+ and V3+ intracenter emission, while the 1.41eV band was suggested to be a donor-bound transition. The identity of the donor is tentatively attributed to a donor complex that associates vanadium to an arsenic vacancy. From Hall effect as function of temperature, the donor ionisation energy was estimated to be about 102±5meV.