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Cites_doi 10.1063/1.1690876
10.1364/AO.27.001281
10.1299/jsmec.46.1598
10.1007/s003390100934
10.1063/1.112818
10.1116/1.1624272
10.1117/1.1805563
10.1109/SENSOR.2005.1497272
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Issue 8-10
Keywords Great depth
Reactive ion etching
Silicon
Lithography
High aspect ratio microstructure HARM
Nanotechnology
Language English
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MeetingName ASME/ISPS/JSME-IIP Joint conference on micromechatronics for information and precision equipment, Santa Clara, California, USA, 2006
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References C Du (380_CR2) 2004; 43
M Miwa (380_CR5) 2001; 73
N Sato (380_CR7) 1994; 65
G Wang (380_CR9) 2003; 46
HW Choi (380_CR1) 2004; 84
380_CR3
L Li (380_CR4) 2003; B21
ZD Popovic (380_CR6) 1988; 27
LA Tse (380_CR8) 2003; 9
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SubjectTerms Applied sciences
Electronics
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical engineering. Machine design
Mechanical instruments, equipment and techniques
Microelectronic fabrication (materials and surfaces technology)
Micromechanical devices and systems
Physics
Precision engineering, watch making
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Title Polymer microstructure generated by laser stereo-lithography and its transfer to silicon substrate using reactive ion etching
Volume 13
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