High-performance Recessed-channel Reconfigurable Field-effect Transistor using Si-Ge Heterojunction

A novel strategy is introduced, herein, for the better current drivability ($I_{ON}$) of recessed-channel reconfigurable field-effect transistor (RC-RFET) maintaining low-level off-state leakage current ($I_{OFF}$). A proposed Si-Ge heterojunction RC-RFET features ultra-thin Ge layer selectively gro...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 18; no. 3; pp. 392 - 395
Main Authors Kim, Sangwook, Kim, Sangwan
Format Journal Article
LanguageEnglish
Korean
Published 대한전자공학회 01.06.2018
Subjects
전기공학
logic functionality
Reconfigurable FET
heterojunction
logic devices
Moore’s law
Moore's law
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Summary:A novel strategy is introduced, herein, for the better current drivability ($I_{ON}$) of recessed-channel reconfigurable field-effect transistor (RC-RFET) maintaining low-level off-state leakage current ($I_{OFF}$). A proposed Si-Ge heterojunction RC-RFET features ultra-thin Ge layer selectively grown on source/drain contacts. Thus, Schottky barrier height is reduced while Shockley-Read-Hall recombination and band-to-band tunneling leakages are efficiently suppressed. The optimized Si-Ge heterojunction RC-RFET shows ${\times}25$ and ${\times}102$ better $I_{ON}/I_{OFF}$ for n- and p-FETs than that of Si homo-junction ones, respectively.
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2018.18.3.392