Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors

Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. Fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 6; no. 3; pp. 408 - 421
Main Authors Towe, E., Pan, D.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Electromagnetic radiation
Infrared
Infrared detectors
Nanocomposites
Nanomaterials
Nanostructure
Optical sensors
Photodetectors
Quantum cascade lasers
Quantum dots
Quantum mechanics
Semiconductor materials
Semiconductor nanostructures
Semiconductors
Spectra
Temperature
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Summary:Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. Fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the active regions of a new class of electronic and optoelectronic devices with novel functionalities. This paper reviews the state-of-the-art in the use of these objects in infrared detectors. It describes the progress, challenges, and projections for continued development of normal-incidence intersublevel detectors operating in the spectral region between 6 and 20 /spl mu/m.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1077-260X
1558-4542
DOI:10.1109/2944.865096