Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-h...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 56; no. 4S; pp. 4 - 04CN02
Main Authors Kim, Kyungjun, Choi, Chulmin, Oh, Youngtaek, Sukegawa, Hiroaki, Mitani, Seiji, Song, Yunheub
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2017
Subjects
Barriers
Chemical vapor synthesis
Dielectric breakdown
Electric potential
Magnesium oxide
Time dependence
Tunnels (transportation)
Voltage
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Summary:Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.
Bibliography:ObjectType-Article-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.04CN02