Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

Hole and electron traps at a p–n heterostructure with InGaAs/GaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) are investigated by capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS). The C–V and DLTS measurements allowed to detect that the region of...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 273-274; pp. 959 - 962
Main Authors Sobolev, M.M, Kochnev, I.V, Lantratov, V.M, Cherkashin, N.A, Emtsev, V.V
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.1999
Elsevier
Subjects
Gallium arsenide
Heterostructures
Physics
Quantum dot
Gallium arsenide
Quantum dot
Heterostructures
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Summary:Hole and electron traps at a p–n heterostructure with InGaAs/GaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) are investigated by capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS). The C–V and DLTS measurements allowed to detect that the region of the accumulation of the electron concentration is characterized by the presence of hole and electron traps. We have observed by means of deep level defects, the population of the energy states of InGaAs quantum dots as a function of temperature of isochronous annealing as well as under bias-on–bias-off cooling conditions and white light illumination.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00577-3