Ni-defective value and resistivity of sputtered NiO films

The lattice constant of the rhombohedral NiO films is larger than that of the bulk and depends on the O 2 partial pressure ( P O) during the reactive sputtering; the axis angle is close to that of the bulk. The anisotropy of magnetic susceptibility χ is observed, and the average value (1.2×10 −9 H/m...

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Bibliographic Details
Published inJournal of magnetism and magnetic materials Vol. 226; pp. 1627 - 1628
Main Authors Kohmoto, O., Nakagawa, H., Ono, F., Chayahara, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2001
Subjects
Antiferromagnets
Oxygen stoichiometry
Resistivity
Thin films
Thin films
Oxygen stoichiometry
Resistivity
Antiferromagnets
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Summary:The lattice constant of the rhombohedral NiO films is larger than that of the bulk and depends on the O 2 partial pressure ( P O) during the reactive sputtering; the axis angle is close to that of the bulk. The anisotropy of magnetic susceptibility χ is observed, and the average value (1.2×10 −9 H/m) is the same as that of the bulk. Rutherford back scattering (RBS) analysis shows that the NiO films are confirmed to be non-stoichiometric and the Ni-defective value γ in Ni 1− γ O films is 0.14–0.23; γ increases with P O. The electric resistivity ρ (∼1 Ω cm) of the NiO film is four orders of magnitude smaller than that of bulk NiO, and decreases slightly with increasing γ.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0304-8853
DOI:10.1016/S0304-8853(00)01042-8