Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Significant improvement on uniformity and reliability characteristics in Ge pMOSFET are achieved with a novel low temperature supercritical phase CO2 fluid treatment with H2O cosolvent. Devices with the proposed treatment also exhibit a lower subthreshold swing, a higher on/off current ratio, and a...

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Bibliographic Details
Published inSurface & coatings technology Vol. 423; p. 127632
Main Authors Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Kuo, Bo-Lien, Hong, Zi-Qin, Liu, Guan-Ting, Liu, Po-Tsun
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.10.2021
Elsevier BV
Subjects
Cosolvent
Ge pMOSFET
Low temperature
Low temperature supercritical fluid treatment
Oxidation
Reliability
Supercritical fluids
Uniformity
Ge pMOSFET
Cosolvent
Reliability
Low temperature supercritical fluid treatment
Uniformity
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Summary:Significant improvement on uniformity and reliability characteristics in Ge pMOSFET are achieved with a novel low temperature supercritical phase CO2 fluid treatment with H2O cosolvent. Devices with the proposed treatment also exhibit a lower subthreshold swing, a higher on/off current ratio, and a lower interface trap density. The improvement can be attributed to the reduction of oxygen vacancy and low oxidation states in the interfacial layer (IL), and the quality enhancement on both IL and high-k gate stack. •A low temperature supercritical phase CO2 fluid with H2O cosolvent treatment was proposed.•The uniformity and reliability characteristics of p-channel Ge transistor can be improved.•Improvement can be attributed to reduction of oxygen vacancy and low oxidation states.•The process is promising for the mass production of chip on large-size wafers.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2021.127632