Novel homoleptic, dimeric zinc(II) phthalocyanines as gate dielectric for OFET device

• Published in: Synthetic metals Vol. 230; pp. 7 - 11
• Main Authors: Karaoğlan, Gülnur Keser, Gümrükçü, Gülşah, Gördük, Semih, Can, Nursel, Gül, Ahmet
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.08.2017; Elsevier BV
• Subjects: Benzene; Chemical synthesis; Coated electrodes; Dielectric; Dielectrics; Dimeric; Electrodes; Leakage current; NMR; Nuclear magnetic resonance; Ofet; Phthalocyanine; Synthesis; Zinc; Phthalocyanine; Synthesis; Ofet; Dimeric; Dielectric; Zinc
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/j.synthmet.2017.04.019

•An unsymmetrical phthalocyanine with t-BuCH3 group has been prepared.•A novel benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized.•The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET. A novel multicomponent system consisting of benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized. Firstly, a novel unsymmetrically nitro and 2,4-di-tert-butylphenoxy groups substituted zinc (II) phthalocyanine was synthesized and then nitro group was reduced to amino functional group. All newly synthesized compounds were characterized by UV–Vis, FTIR, 1H-NMR, MALDI-TOF MS and elemental analysis spectral data. The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET using poly 3-hexylthiophene-2,5-diyl as active layer. Field effect mobility values of 3.2×10−4cm2/Vs was obtained when using ITO-coated glass as gate electrode. It was found that the density of leakage current was about 2nA/cm2 at 5V. The capacitance density of 11.8nF/cm2 was achieved at a frequency of 5Hz with slightly smaller values at higher frequency.