High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FE...

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Published inJapanese Journal of Applied Physics Vol. 50; no. 4; pp. 04DN07 - 04DN07-5
Main Authors Yang, Po-Yu, Wang, Jyh-Liang, Tsai, Wei-Chih, Wang, Shui-Jinn, Lin, Jia-Chuan, Lee, I-Che, Chang, Chia-Tsung, Cheng, Huang-Chung
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2011
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Summary:Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ${\sim}2.17$ V/μm and threshold field of ${\sim}3.43$ V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, low-temperature processing, and structural simplicity, making it promising for applications in flat panel displays.
Bibliography:Fabrication procedures for offset-TFT-controlled AZO nanostructure FEAs. (a) FE-SEM images (45° tilt view) and (b) top view of AZO NW arrays synthesized on the drain region of the offset-TFT. (c) EDS spectrum of the AZO NWs. (d) High-resolution TEM image of AZO NW. The inset is the corresponding diffraction pattern. (a) Transfer characteristics of the offset-TFTs with various offset lengths. (b) Breakdown voltages and saturated drain currents for different offset lengths of offset-TFTs. Transfer characteristics of offset-TFTs with offset lengths of 15 μm before and after the growth of AZO NWs. (a) Schematic diagram of a high-vacuum field emission measurement for offset-TFT-controlled AZO NW FEAs. (b) Field emission characteristics of the uncontrolled and offset-TFT-controlled AZO NW FEAs for different gate voltages. (c) Corresponding FN plots of the uncontrolled and offset-TFT-controlled AZO NW FEAs. Anode current and gate voltage characteristics of the offset-TFT-controlled AZO NW FEAs. Anode current stabilities of uncontrolled and offset-TFT-controlled AZO NW FEAs over an operating period of one hour.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.04DN07