Analysis of InAsSb/GaAs submonolayer stacks

•A TESb flush leads to Sb incorporation into InAs/GaAs submonolayer stacks.•The Sb incorporation can be described by a Langmuir-type adsorption model.•The localization depth can be tuned with the GaAs spacer thickness.•Charge-carrier localization is only found below a critical thickness. InAsSb subm...

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Bibliographic Details
Published inJournal of crystal growth Vol. 494; pp. 1 - 7
Main Authors Quandt, David, Bläsing, Jürgen, Strittmatter, André
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.07.2018
Elsevier BV
Subjects
A1. Adsorption
A1. Characterization
A1. Photoluminescence
A1. X-ray fluorescence
A3. Metalorganic chemical vapor deposition
Adsorption
B2. Semiconducting III–V materials
Chemical vapor deposition
Current carriers
Fluorescence
Interface roughness
Luminescence
Position (location)
Semiconductors
X ray reflection
X-rays
A1. Adsorption
A1. Characterization
B2. Semiconducting III–V materials
A1. X-ray fluorescence
A3. Metalorganic chemical vapor deposition
A1. Photoluminescence
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Summary:•A TESb flush leads to Sb incorporation into InAs/GaAs submonolayer stacks.•The Sb incorporation can be described by a Langmuir-type adsorption model.•The localization depth can be tuned with the GaAs spacer thickness.•Charge-carrier localization is only found below a critical thickness. InAsSb submonolayer (SML) islands separated by GaAs spacer layers show three-dimensional charge carrier localization centers of very high density. We advance the understanding of the submonolayer growth technique by combination of structural and optical data. Our analysis of the Sb incorporation by Langmuir-type adsorption model reveals involvement of a slow reaction component. In search for the governing mechanism for electronic coupling we monitored structural parameters such as interface roughness by X-ray reflection measurements. Interestingly, no significant structural changes with respect to the spacer thickness are found. Still, a critical upper thickness limit to observe electronic changes of 1.8–1.9 MLs GaAs is found. Below this critical thickness, three-dimensional charge carrier localization is present in the SML stack and the average localization depth can be controlled through spacer thickness.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.04.031