Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM
The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible fo...
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Published in | IEEE transactions on nuclear science Vol. 54; no. 4; pp. 898 - 903 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.08.2007
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Subjects | |
Online Access | Get full text |
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Summary: | The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0018-9499 |
DOI: | 10.1109/TNS.2006.889810 |