Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis

Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly $a$-axis orientated according to the result of optic...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 8; pp. 088001 - 088001-2
Main Authors Takemoto, Yujin, Oshima, Minoru, Yoshino, Kenji, Toyota, Kouji, Inaba, Koichiro, Haga, Ken-ichi, Tokudome, Koichi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2011
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Summary:Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly $a$-axis orientated according to the result of optical transmittance and X-ray diffraction analyses, respectively. The n-type Ga-doped ZnO films had a low sheet resistivity of 250 $\Omega$/$\square$ at an optimal Ga content of 1 at. % upon UV irradiation.
Bibliography:Images of (a) nondoped and (b) Ga-doped ZnO/PET films grown by atmospheric spray pyrolysis at 150 °C. XRD spectra of nondoped and Ga-doped ZnO/PET films grown by atmospheric spray pyrolysis at 150 °C, with the XRD spectrum of PET film for reference. SEM images of surfaces of (a) nondoped and (b) Ga-doped ZnO/PET films grown by atmospheric spray pyrolysis at 150 °C. Optical transmittance spectra of nondoped and Ga-doped ZnO/PET films grown by atmospheric spray pyrolysis at 150 °C. Sheet resisitivity of Ga-doped ZnO/PET film grown by atmospheric spray pyrolysis at 150 °C, as a function of UV irradiation time.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.088001