Basic studies of molecular beam epitaxy—past, present and some future directions

• Published in: Journal of crystal growth Vol. 264; no. 4; pp. 605 - 619
• Main Authors: Joyce, Bruce A, Joyce, Tim B
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 31.03.2004; Elsevier
• Subjects: A1. Nucleation; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting silicon; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Theory and models of film growth; A1. Nucleation; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting silicon; Homoepitaxy; Gallium arsenides; Inorganic compounds; Nucleation; Quantum dots; Theoretical study; Binary compounds; Crystal growth from vapors; RHEED; Indium arsenides; Thin films; Atomistic model; Growth mechanism; Molecular beam epitaxy; Anomaly; Silicon; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.12.045

We present a summary of the history, present day activities and some possible future directions of molecular beam epitaxy. We confine our attention to growth-related phenomena and do not attempt to discuss the vast amount of work on device fabrication, although we acknowledge its huge contribution to the subject. We emphasize the extent to which basic studies are now being directed towards an understanding of growth processes at the atomistic level, treating as examples the homoepitaxial growth of GaAs(0 0 1) films and InAs–GaAs quantum dot formation. We also discuss recent work on silicon and on Group III-element nitrides.