Effect of OH content in the quartz crucible on the growth and quality of CsI single crystals and remedies

• Published in: Journal of crystal growth Vol. 544; p. 125710
• Main Authors: Patra, G.D., Singh, S.G., Desai, D.G., Pitale, Shreyas, Ghosh, Manoranjan, Sen, Shashwati
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.08.2020; Elsevier BV
• Subjects: A1. Characterization; A1. Impurities; A2. Bridgman technique; B1. Halides; B2. Scintillator materials; B3. Scintillators; Bridgman method; Crucibles; Crystal growth; Energy resolution; Fused silica; Gas analyzers; Optical properties; Outgassing; Residual gas; Scintillation; Silica glass; Silicon dioxide; Single crystals; Temperature dependence; A2. Bridgman technique; B3. Scintillators; A1. Impurities; B1. Halides; A1. Characterization; B2. Scintillator materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2020.125710

•OH concentration in quartz crucible affects the quality of grown crystals.•Out-diffusion of OH from quartz crucible as a function of temperature.•Effect of OH on optical quality of CsI single crystal.•Maximum permissible level of OH for single crystal growth is quantified.•Scintillation properties of CsI:Tl improved when grown in OH free quartz crucible. We have investigated the effect of hydroxyl (OH) content in fused silica crucible on the scintillation and optical properties of the CsI single crystal, but not limited to, grown by Bridgman technique. For the purpose, 0.1 mol% Tl doped CsI single crystals were grown in crucibles made from fused silica of different grades with OH content varying from 20 ppm to 200 ppm. Silica glass of crucibles was characterized by FTIR and UV–VIS-NIR spectroscopy for the estimation of OH content. Grown crystals were tested for their scintillation performance and a correlation between OH content in silica glass and crystal quality is established. The possibility of ‘OH’ out-diffusion from silica crucible into the melt at higher temperature was further established by temperature dependent study of outgassing from silica crucible by residual gas analyzer (RGA). Further, an optimized process for silica crucible annealing to remove OH (<20 ppm) is proposed to achieve excellent crystal quality of a 5.6% energy resolution at 662 keV without any co-doping in Tl doped CsI.