Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

[Display omitted] In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged a capacitor through the devices to perform both t...

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Bibliographic Details
Published inSolid-state electronics Vol. 183; p. 108113
Main Authors García, Héctor, Vinuesa, Guillermo, Ossorio, Óscar G., Sahelices, Benjamín, Castán, Helena, Dueñas, Salvador, González, Mireia B., Campabadal, Francesca
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2021
Subjects
Electrical characterization
Hafnium oxide
ReRAM devices
ReRAM devices
Electrical characterization
Hafnium oxide
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Summary:[Display omitted] In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged a capacitor through the devices to perform both transitions. In this way, both transitions are shown to be controllable. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2021.108113