TEM characterisation of GdN thin films

The rare-earth metal nitrides have been predicted to possess a wide range of electronic structures, ranging from ferromagnetic to half-metallic to semiconducting, which makes these materials attractive for a range of applications. In this study, GdN thin films were grown at room temperature on silic...

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Bibliographic Details
Published inCurrent applied physics Vol. 6; no. 3; pp. 407 - 410
Main Authors McKenzie, W.R., Munroe, P.R., Budde, F., Ruck, B.J., Granville, S., Trodahl, H.J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2006
Subjects
FIB
Gadolinium nitride
GdN
TEM
Thin film
GdN
Gadolinium nitride
TEM
68.55.a
FIB
Thin film
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Summary:The rare-earth metal nitrides have been predicted to possess a wide range of electronic structures, ranging from ferromagnetic to half-metallic to semiconducting, which makes these materials attractive for a range of applications. In this study, GdN thin films were grown at room temperature on silicon and glass quartz substrates by thermally evaporating gadolinium metal in nitrogen atmospheres. A detailed microstructural characterisation of these films was carried out using a variety of techniques such as transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectrometry. TEM analysis indicated the films are nano-crystalline, with crystallite sizes being affected by the ionisation state of the nitrogen atmosphere used. Sources of the films’ internal stress were discussed with a significant amount of oxygen absorption, identified by RBS, being a probable cause. Electron diffraction and energy dispersive X-ray studies found that GdN was the only phase present with oxygen uniformly distributed throughout the film.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2005.11.029