Magnetic ordering and magnetic transitions in GdMnSi compound

GdMnSi compound has been studied by various methods on single crystalline and polycrystalline samples. The magnetic measurements conducted on single crystalline sample at different crystal directions showed that at essentially high magnetic fields ( H > H C) the magnetic moment abruptly increases...

Full description

Saved in:
Bibliographic Details
Published inJournal of alloys and compounds Vol. 451; no. 1; pp. 450 - 453
Main Authors Ovtchenkova, I.A., Nikitin, S.A., Ivanova, T.I., Tskhadadze, G.A., Skourski, Yu.V., Suski, W., Nizhankovski, V.I.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 28.02.2008
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:GdMnSi compound has been studied by various methods on single crystalline and polycrystalline samples. The magnetic measurements conducted on single crystalline sample at different crystal directions showed that at essentially high magnetic fields ( H > H C) the magnetic moment abruptly increases by 0.7 μ B. The value of critical magnetic field H C varies from 25 to 75 kOe depending on crystal direction while the value of the jump of magnetic moment remains constant at different crystal directions. The increase of the magnetic field leads also to a sharp decrease of the resistivity and a jump of magnetoresistance over 17% at H > H C. To clarify the magnetic structure and magnetic interactions, the model of that magnetic transition in high magnetic fields for this compound has been developed. The results of experimental measurements and calculations showed that investigated GdMnSi compound is characterized by strong exchange interactions inside R and Mn subsystems and weaker R–Mn interaction, and the high magnetic fields can produce an essential change of the relative orientation of magnetic moments of Gd and Mn sublattices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2007.04.186