Short pulse generation using multisegment mode-locked semiconductor lasers
Mode-locked semiconductor lasers which incorporate multiple contacting segments are found to give improved performance over single-segment designs. The functions of gain, saturable absorption, gain modulation, repetition rate tuning, wavelength tuning, and electrical pulse generation can be integrat...
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Published in | IEEE journal of quantum electronics Vol. 28; no. 10; pp. 2186 - 2202 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.10.1992
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Subjects | |
Online Access | Get full text |
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Summary: | Mode-locked semiconductor lasers which incorporate multiple contacting segments are found to give improved performance over single-segment designs. The functions of gain, saturable absorption, gain modulation, repetition rate tuning, wavelength tuning, and electrical pulse generation can be integrated on a single semiconductor chip. The optimization of the performance of mode-locked lasers in terms of material parameters, waveguiding parameters, electrical parasitics, and segment length is discussed experimentally and theoretically.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/3.159527 |