Towards high-performance near-infrared photodetectors based on SnS nanowires

• Published in: Europhysics letters Vol. 136; no. 2; pp. 27003 - 27006
• Main Authors: Gu, C. F., Cheng, Y. C., Dai, Q. Y., Liu, D. Q., Lv, W. L., Xv, S. N., Sun, L., Peng, Y. Q., Shu, H. B.
• Format: Journal Article
• Language: English
• Published: Les Ulis EDP Sciences, IOP Publishing and Società Italiana di Fisica 01.10.2021; IOP Publishing
• Subjects: Chemical vapor deposition; Dark current; Infrared detectors; Lead phthalocyanine; Luminous intensity; Mica; Nanowires; Near infrared radiation; Optical properties; Photometers; Photosensitivity; Substrates
• ISSN: 0295-5075; 1286-4854
• DOI: 10.1209/0295-5075/ac4528

Abstract Compared with bulk structures, semiconductor nanowires exhibit a higher surface-to-volume ratio, as well as unique electrical and optical properties. Due to its narrow band gap, tin (ii) sulfide (SnS) nano wire is a promising candidate for constructing near-infrared (NIR) photodetectors. Uniformly distributed and well-aligned SnS nanowires were grown on a mica substrate by chemical vapor deposition, and NIR photodetectors with Au (Au-device) and Al (Al-device) as the electrode were fabricated and characterized. Compared to the Au-device, the Al-device achieved higher photodetectivity due to reduced dark current. More importantly by incorporating a photosensitive lead phthalocyanine (PbPc) film into the Al-device, both responsivity and detectivity could be apparently improved, especially at weak light intensities. Under a weak light intensity of 0.79 mW/cm 2 the photoresponsivity and specific detectivity were improved from and Jones to 0.96 A/W and Jones, respectively.