Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal

•Oxygen in Si crystal is reduced by high concentration of arsenic or phosphorus.•Arsenic and phosphorus oxides in addition to SiO contribute to oxygen evaporation.•AsO, As2O, As4O and PO, P2O, P4O are the species involved in oxygen evaporation.•Oxygen evaporation enhancement is effective at high N-t...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 548; p. 125820
Main Authors Scala, Roberto, Porrini, Maria, Voronkov, Vladimir
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.10.2020
Elsevier BV
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:•Oxygen in Si crystal is reduced by high concentration of arsenic or phosphorus.•Arsenic and phosphorus oxides in addition to SiO contribute to oxygen evaporation.•AsO, As2O, As4O and PO, P2O, P4O are the species involved in oxygen evaporation.•Oxygen evaporation enhancement is effective at high N-type dopant concentration.•Arsenic oxide evaporation rate is higher than phosphorus one. This study investigates the impact of the arsenic and phosphorus concentration on the oxygen content in heavily doped silicon crystals. The resistivity and the oxygen measurements were made on 200 mm crystals grown with the Czochralski method. The oxygen concentration, measured by Gas Fusion Analysis, decreases with the increase of dopant concentration. Two mechanisms related to the effect of the arsenic and phosphorus concentration on the oxygen contents are discussed: one is the possible inhibition of the oxygen segregation inside the silicon crystal due to the lattice deformation and the other is the oxygen evaporation enhancement from the melt through dopant-oxides formation.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2020.125820