A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

We thoroughly compare the DC electrical behavior of n-MOS transistors based on Si nanowires with 〈100〉 and 〈110〉 channel orientations by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the nanowire diameter and it is slightly, but consistently, larg...

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Bibliographic Details
Published inSolid-state electronics Vol. 159; pp. 19 - 25
Main Authors Donetti, L., Sampedro, C., Ruiz, F.G., Godoy, A., Gamiz, F.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2019
Subjects
Gate-all-around MOSFET
Monte Carlo simulation
Multi-subband
Nanowire orientation
Short-channel effects
Multi-subband
Short-channel effects
Gate-all-around MOSFET
Monte Carlo simulation
Nanowire orientation
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Summary:We thoroughly compare the DC electrical behavior of n-MOS transistors based on Si nanowires with 〈100〉 and 〈110〉 channel orientations by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the nanowire diameter and it is slightly, but consistently, larger for 〈100〉 than for 〈110〉 nanowires. The observed differences in mobility, velocity and spatial charge distribution are interpreted in terms of the effective masses and populations of the different Si conduction band valleys, whose sixfold degeneracy is lifted by quantum confinement in narrow nanowires. Finally, we study the scaling behavior for channel lengths down to 8 nm, concluding that the differences observed between orientations are minimal.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2019.03.044