Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

• Published in: Japanese Journal of Applied Physics Vol. 51; no. 6; pp. 06FF11 - 06FF11-4
• Main Authors: Otsuka, Shintaro, Takeda, Ryouta, Furuya, Saeko, Shimizu, Tomohiro, Shingubara, Shouso, Iwata, Nobuyuki, Watanabe, Tadataka, Takano, Yoshiki, Takase, Kouichi
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.06.2012
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.51.06FF11

We have investigated the current--voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.