Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems

The microstructure of In(As,Bi)/GaAs heterostructures grown by low-temperature molecular beam epitaxy with special attention to the interfaces was studied by scanning/transmission electron microscopy, energy dispersive X-ray microanalysis, and X-ray diffraction and reflectivity. Two samples grown at...

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Bibliographic Details
Published inJournal of materials research Vol. 33; no. 16; pp. 2342 - 2349
Main Authors Likhachev, Igor A., Trunkin, Igor N., Tsekhosh, Vladimir I., Prutskov, Grigory V., Subbotin, Ilia A., Klekovkin, Alexey V., Pashaev, Elkhan M., Vasiliev, Alexander L., Kazakov, Igor P.
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 28.08.2018
Springer International Publishing
Springer Nature B.V
Subjects
Applied and Technical Physics
Biomaterials
Bismuth
Clusters
Confidence intervals
Crystal lattices
Crystal structure
Electrons
Energy transmission
Epitaxial growth
Heterostructures
Inorganic Chemistry
Interfaces
Materials Engineering
Materials research
Materials Science
Microscopy
Microstructure
Molecular beam epitaxy
Molecular beams
Morphology
Nanotechnology
Quantum dots
Scanning electron microscopy
Software
Strain relaxation
Transmission electron microscopy
X-ray diffraction
scanning transmission electron microscopy (STEM)
X-ray diffraction (XRD)
Bi
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Summary:The microstructure of In(As,Bi)/GaAs heterostructures grown by low-temperature molecular beam epitaxy with special attention to the interfaces was studied by scanning/transmission electron microscopy, energy dispersive X-ray microanalysis, and X-ray diffraction and reflectivity. Two samples grown at similar conditions with and without the presence of the Bi-contained layer, formed at 350 °C, are considered. These samples were jointly analyzed to clarify Bi influence on the crystal structure. Two types of QD-like clusters at the GaAs/In(As,Bi) interface were found. The first type exhibited a zinc blend crystal structure, which is typical for A3B5 semiconductors. The second type adopted a tetragonal PbO crystal structure and was found in different orientations. The joint analysis by electron microscopy and X-ray methods demonstrated that the incorporation of Bi atoms into the InAs layer leads to the strain relaxation at the interface in the growth direction. According to electron microscopy data, this strain release is more pronounced around the clusters of the second type.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2018.254