Applications of the Heterojunction with Intrinsic Thin Layer Solar-Cell Structure on Photodetectors

We have utilized the high-efficiency heterojunction with intrinsic thin-layer (HIT) solar-cell structure for applications in photodetectors. In this research, we have investigated the relationship between responsivities and thicknesses of active layers, including top intrinsic amorphous Si and bulk...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 9; pp. 09MA04 - 09MA04-3
Main Authors Wei, Chun-You, Lin, Chu-Hsuan
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2011
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Summary:We have utilized the high-efficiency heterojunction with intrinsic thin-layer (HIT) solar-cell structure for applications in photodetectors. In this research, we have investigated the relationship between responsivities and thicknesses of active layers, including top intrinsic amorphous Si and bulk crystalline Si. The thickness of a HIT photodetector should depend on the detection wavelength desired. For a typical HIT structure with a 5-nm-thick top intrinsic amorphous Si layer, the responsivities at 450, 650, and 850 nm wavelengths could be 0.511, 0.529, and 0.641 A/W, respectively. The responsivity at the 450 nm wavelength can reach 0.591 A/W for a 20-nm-thick top intrinsic amorphous Si layer even when the bulk Si is only 1.5 μm thick.
Bibliography:Schematic structure of a HIT solar cell. Current density under AM 1.5 G illumination for the HIT structure with a 5-nm-thick top a-Si(i) layer or a 40-nm-thick top a-Si(i) layer. Band diagrams of the HIT cell in Fig. under short-circuit (0 V) and reverse ($-1$ V) conditions. Dark current and photocurrents of the HIT structure in Fig. . Responsivity as a function of the thickness of the bulk c-Si layer at various wavelengths. (a) Responsivity of HIT photodetectors as a function of the thickness of the top intrinsic a-Si layer when the bulk c-Si layer is 1.5 μm thick. (b) Responsivity of HIT photodetectors as a function of the thickness of the top intrinsic a-Si layer when the bulk c-Si is 250 μm thick.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.09MA04