Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V

• Published in: Journal of crystal growth Vol. 507; pp. 134 - 138
• Main Authors: Matsumoto, Koh, Ubukata, Akinori, Guanxi, Piao, Yano, Yoshiki, Tabuchi, Toshiya, Koseki, Shuichi, Sodabanlu, Hassanet, Watanabe, Kentaro, Nakano, Yoshiaki, Sugiyama, Masakazu
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2019; Elsevier BV
• Subjects: B1. Materials by type; B3. Devices gallium nitride; B3. Devices semiconducting gallium arsenide; Biological evolution; Cost analysis; Feedback; Gallium nitrides; Metalorganic chemical vapor deposition; Micrometers; Photovoltaic cells; Productivity; Reactor design; Reactors; Semiconductors; Solar cells; Substrates; Vapor phases; B3. Devices gallium nitride; B1. Materials by type; B3. Devices semiconducting gallium arsenide; Semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2018.11.011

•Design criteria of high growth rate MOVPE reactor are described.•GaAs solar cell was grown by MOVPE with a growth rate of 90 µm/h.•The cell efficiency of 23.59%, Voc of 1.003 V, Jsc of 29.36 and FF of 0.81.•Si doped GaN was grown on 4 in. sapphire substrate by production MOVPE.•E3 trap density was about 1 × 1014 cm−3 at a donor concentration of 1.0 × 1016 cm−3. High growth rate of GaAs more than 90 μm/h is achieved in the attempt of the productivity improvement of solar cells. The design concept is derived from the MOVPE reactor for nitrides. The design criteria for nitride MOVPE reactor were found to be very useful for GaAs MOVPE. Originally, MOVPE reactors for nitrides were developed on the basis of the reactor design for classical III-V materials. Today, the principle of reactor design to cope with the singularity of nitrides brings about essential feedback to the next-generation reactors for classical III-V materials for improved productivity. At first, design criteria for GaN MOVPE reactor are described in light of the vapor phase reaction. Secondly, cost analysis of a 19 µm-thick GaN layer on a bulk GaN substrate for a vertical diode is briefly discussed in light of a trade-off between a high purity and a high growth rate of GaN. In GaAs-based solar cells, the thickness of light absorber is a couple of micrometers, accompanied by a thin (Al)InGaP cap, the growth time of which can be reduced to a few minutes if the growth rate is on the order of a few tens µm/h. In consideration of these factors, cost analysis of MOVPE for GaAs solar cells will be discussed in comparison with GaN on GaN diode.