Selective Epitaxial Growth of Silicon for Vertical Diode Application

Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity loss during silicon SEG using the most popular H...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 49; no. 8; pp. 08JF03 - 08JF03-4
Main Authors Lee, Kong-Soo, Yoo, Dae-Han, Han, Jae-Jong, Hyung, Yong-Woo, Kim, Seok-Sik, Kang, Chang-Jin, Jeong, Hong-Sik, Moon, Joo-Tae, Park, Hyunho, Jeong, Hanwook, Kim, Kwang-Ryul, Choi, Byoungdeog
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2010
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Summary:Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity loss during silicon SEG using the most popular H 2 /dichlorosilane (DCS)/HCl gas system were evaluated using a commercialized inspection tool in 200 mm wafers with real contact patterns. It was revealed that $\text{HCl}/(\text{DCS}+\text{HCl})$ ratio and the contact structure played a crucial role in suppressing selectivity loss. The number of selectivity losses in an entire wafer was less than 100 when the $\text{HCl}/(\text{DCS}+\text{HCl})$ ratio was larger than 0.41. The vertical pn diode prepared using the silicon SEG process with elaborate selectivity control showed more remarkable electrical abilities to accommodate current flow than polycrystalline silicon (poly-Si), including the ideality factor and swing, and reverse leakage current.
Bibliography:SEM image of selectivity loss in deep contact patterns. Typical map of wafer inspected using commercialized tool after separating the silicon nodes. All the dots represent abnormalities and potential possibilities of selectivity loss. (Color online) Electron microscopy images of selectivity loss after Si node separation: (a) SEM top view image and (b) TEM cross-sectional image. Selectivity loss as a function of the average height of SEG layer (or process time). The $\text{HCl}/(\text{DCS}+\text{HCl})$ gas ratio was maintained to be 0.33. Selectivity loss as a function of $\text{HCl}/(\text{DCS}+\text{HCl})$ ratio. The average height of SEG was maintained to be 600 nm. Forward bias $I$--$V$ characteristics of the vertical pn diodes.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.08JF03