Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE

• Published in: Journal of crystal growth Vol. 524; p. 125165
• Main Authors: Hossain, Emroj, Rahman, A. Azizur, Gokhale, Mahesh, Kulkarni, Ruta, Mondal, Rajib, Thamizhavel, Arumugam, Bhattacharya, Arnab
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.10.2019; Elsevier BV
• Subjects: Buffers; Carrier gases; Gallium nitrides; Gallium oxides; High temperature; Metalorganic chemical vapor deposition; Metalorganic vapor phase epitaxy; Nitrides; Optimization; Oxides; Semiconducting gallium compounds; Substrates; Thickness; Nitrides; Oxides; Semiconducting gallium compounds; Substrates; Metalorganic vapor phase epitaxy
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2019.125165

•Detailed optimization of epitaxial growth of GaN on (1 0 0) β-Ga2O3 via MOVPE.•Demonstration of high quality GaN by 3-step MOVPE using an intermediate facet-control layer.•Comprehensive structural and optical characterization of GaN on (1 0 0) β-Ga2O3.•Influence of variation of the thickness of the LT GaN, and the thickness and growth temperature of the facet layer studied. We report a comprehensive study of the growth of GaN layers on (1 0 0)-oriented Ga2O3 substrates by metalorganic vapour phase epitaxy (MOVPE), especially the improvement on using an intermediate facet-control layer between the low-temperature buffer and the high-temperature GaN layer compared to the usual two-step growth process. We examined in detail the effects of substrate nitridation, carrier gas, and variation of the thickness of the low-temperature buffer GaN layer, and the thickness and growth temperature of the facet layer. This optimization allowed us to obtain GaN layers on (1 0 0)-oriented Ga2O3 with high structural and optical quality, as shown by high-resolution X-ray diffraction, electron microscopy, optical absorption, and luminescence measurements.