Enhanced UV photodetectivity in solution driven ZnO nanosheets via piezo-phototronic effect

• Published in: Journal of materials research and technology Vol. 13; pp. 397 - 407
• Main Authors: Lee, Dong Jin, Ryu, Sung Ryong, Kumar, Ganesan Mohan, Ahn, Il-Ho, Kyhm, Jihoon, Kim, Deuk Young, Ilanchezhiyan, Pugazhendi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2021; Elsevier
• Subjects: Cathodoluminescence; Photodetector; Piezo-phototronic effects; ZnO nanosheets; Piezo-phototronic effects; ZnO nanosheets; Cathodoluminescence; Photodetector
• ISSN: 2238-7854
• DOI: 10.1016/j.jmrt.2021.04.080

Here in, we report the fabrication of thin two dimensional (2D) ZnO nanosheets (NSs) flexible piezo-phototronic ultraviolet (UV) photodetector (PD). The morphological and optical properties of the as-synthesized ZnO NSs is characterized in detail. The flexible Ag–ZnO NSs-Ag lateral PDs are fabricated on the polyethylene terephthalate (PET) substrate. A striking photoresponse is observed for 2D-ZnO under UV illumination. Furthermore, by introducing a strain (in the form of bending) the photocurrent and responsivity of this PD can be modulated via piezo-phototronic effect, emerging from the ZnO nanosheets. The photocurrent enhancement under bending could be attributed to the piezo polarization charges produced at ZnO/Ag interface due to strain. This piezo polarization charges result in the modulation of Schottky barrier (SB) height at the semiconductor/metal interface and induce improved photogenerated charge carriers and reduced recombination probability to result enhanced performances from the ZnO NSs photodetector. The physical mechanism involved in the enhancement of photocurrent via piezo-phototronic is proposed to explain change in SB height at semiconductor/metal interface using the band diagrams. This results demonstrates an efficient prototype of the piezo-phototronic PD based on thin ZnO NSs, which provides an effective pathway to enhance the performance of optoelectronic devices.