First principles calculations of solution energies of dopants around stacking faults in Si crystal

First principles calculations were performed to investigate the recent transmission electron microscopic observations of the dislocation cores of heavily doped n- and p-type Si crystals. Segregations around the stacking fault region of p-type (Ga, Al, In) and n-type (P, As, Sb) dopants were confirme...

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Published inJapanese Journal of Applied Physics Vol. 53; no. 6; pp. 61302 - 1-061302-4
Main Authors Yamamoto, Yosuke, Togase, Kensuke, Ohno, Yutaka, Yonenaga, Ichiro, Nishitani, Shigeto R.
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.06.2014
Subjects
Aluminum
Crystals
Dopants
Energy gaps (solid state)
Energy of solution
Interlayers
Mathematical analysis
Silicon
Stacking faults
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Summary:First principles calculations were performed to investigate the recent transmission electron microscopic observations of the dislocation cores of heavily doped n- and p-type Si crystals. Segregations around the stacking fault region of p-type (Ga, Al, In) and n-type (P, As, Sb) dopants were confirmed by the solution energy differences of the location sites between the perfect lattice and stacking fault. These solution energy changes are caused not by the interlayer relaxations around the dopants but by the electronic structure changes near the band gaps.
Bibliography:ObjectType-Article-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.061302