Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

• Published in: Applied physics express Vol. 13; no. 7; pp. 76501 - 76504
• Main Authors: Koretomo, Daichi, Hamada, Shuhei, Mori, Marin, Magari, Yusaku, Furuta, Mamoru
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.07.2020
• Subjects: Flexible Electronics; In-Ga-Zn-O; Low-temperature Process; Oxide semiconductors; Thin-film Transistors
• ISSN: 1882-0778; 1882-0786
• DOI: 10.35848/1882-0786/ab9478

A marked improvement in the reliability of a high-mobility In-Ga-Zn-O (IGZO) thin-film transistor (TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility ( FE), the atomic ratio of In:Ga:Zn was chosen to be 6:2:1. The IGZO:H TFT exhibited a FE of 18.9 cm2 V−1 s−1 without hysteresis. Moreover, the reliability of the IGZO:H TFT significantly improved after 150 °C annealing as compared with that of a conventional IGZO TFT. Thus, the use of IGZO:H is an effective method of improving both the electrical properties and reliability of TFTs for flexible electronics.