Fluorescence Intermittency in InP Self-Assembled Quantum Dots

• Published in: physica status solidi (b) Vol. 224; no. 1; pp. 67 - 71
• Main Authors: Sugisaki, M., Ren, Hong-Wen, Osad'ko, I.S., Nishi, K., Masumoto, Y.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01.03.2001; WILEY‐VCH Verlag Berlin GmbH
• Subjects: 73.63.Kv; 78.67.Hc; S7.11
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200103)224:1<67::AID-PSSB67>3.0.CO;2-P

We report the fluorescence intermittency in self‐assembled InP quantum dots studied by means of far field single dot spectroscopy. We found that the blinking efficiently occurs when the confined excitons are filled up to a certain level. Since blinking dots are observed in the vicinity of scratches, we attributed the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center near the interface between the dot and matrix. The validity of this model is supported by a thermal activation type behavior of the switching rate and the micro‐photoluminescence study in an external electric field.