Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA wh...

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Bibliographic Details
Published inETRI journal Vol. 28; no. 5; pp. 555 - 560
Main Authors Park, Sahnggi, Sim, Eundeok, Park, Jeong‐Woo, Sim, Jae‐Sik, Song, Hyun‐Woo, Oh, Su Hwan, Baek, Yongsoon
Format Journal Article
LanguageEnglish
Published 01.10.2006
Subjects
dark current
detectors
junction failure
Photodiodes
reliability
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Summary:A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.06.0105.0250