Effects of ion beams on flash memory cells

This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of inte...

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Bibliographic Details
Published inNuclear Technology and Radiation Protection Vol. 29; no. 2; pp. 116 - 122
Main Authors Obrenovic, Marija, Lazarevic, Djordje, Dolicanin, Edin, Vujisic, Milos
Format Journal Article
LanguageEnglish
Published VINCA Institute of Nuclear Sciences 2014
Subjects
flash memory
Monte-Carlo simulation
radiation hardness
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Summary:This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.
ISSN:1451-3994
1452-8185
DOI:10.2298/NTRP1402116O