2 nm Quantum Optical Lithography

• Published in: Optics communications Vol. 291; pp. 259 - 263
• Main Authors: Pavel, E., Jinga, S., Andronescu, E., Vasile, B.S., Kada, G., Sasahara, A., Tosa, N., Matei, A., Dinescu, M., Dinescu, A., Vasile, O.R.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.03.2013
• Subjects: AFM; Beams (radiation); Diffraction; Diffraction limit; Fluorescent photosensitive glass-ceramics; Lithography; Nanocomposites; Nanolithography; Nanomaterials; Nanostructure; SEM; Semiconductors; TEM; Wavelengths; Diffraction limit; AFM; Fluorescent photosensitive glass-ceramics; SEM; Nanolithography; TEM
• ISSN: 0030-4018; 1873-0310
• DOI: 10.1016/j.optcom.2012.10.079

Optical lithography is a key technique in the development of semiconductor industry. However, diffraction effects limit the minimal resolvable feature size to the Rayleigh diffraction limit of λ/2, where λ is the optical wavelength. Many technologies have been proposed in the past to replace optical lithography. Here, we present a new quantum optical method to do subwavelength lithography which is realizable by our current technology now. Using TEM, STEM, SEM and AFM measurements we show that 2nm width lines could be written in novel materials such as fluorescent photosensitive glass-ceramics by a quantum multiphoton confinement effect. Exposure to the focus laser diode beam (λ=650nm) writes high-density lines with 4nm pitch on the sample surface at room temperature, far beyond the diffraction limit, a fundamental barrier to the exploitation of optical lithography. 2 nm Quantum Optical Lithography is an important step to enable full-wafer-level nanofabrication at this resolution.