Forward gated-diode method for parameter extraction of MOSFETs

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak r...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 2; pp. 23 - 27
Main Author 张辰飞 马晨月 郭昕婕 张秀芳 何进 王国增 杨张 刘志伟
Format Journal Article
LanguageChinese
English
Published IOP Publishing 01.02.2011
Subjects
Devices
Dielectrics
Doping
Extraction
MOSFET
MOSFETs
Oxides
Semiconductors
Simulation
二极管
参数提取
掺杂浓度
模拟数据
氧化层厚度
电流特性
门控
Online AccessGet full text

Cover

More Information
Summary:The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.
Bibliography:forward gated-diode method; recombination-generation current; parameter extraction; MOSFETs
TN386.1
parameter extraction
forward gated-diode method
11-5781/TN
recombination-generation current
MOSFETs
TN31
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/2/024001