Hysteresis behavior in 85-nm channel length vertical n-MOSFETs grown by MBE

Vertical n-MOSFETs with channel lengths of 85 nm have been grown by MBE. For drain-to-source voltages V/sub DS/>3.3 V, these transistors exhibit hysteresis behavior similar to the reported behavior of fully depleted SOI-MOSFETs. Our results also show a gate voltage controlled turn-off of the drai...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 43; no. 6; pp. 973 - 976
Main Authors Rao, V.R., Wittmann, F., Gossner, H., Eisele, I.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1996
Subjects
Analytical models
Boron
Electrons
Fabrication
Hysteresis
Impact ionization
MOSFET circuits
Plasma temperature
Threshold voltage
Voltage control
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Summary:Vertical n-MOSFETs with channel lengths of 85 nm have been grown by MBE. For drain-to-source voltages V/sub DS/>3.3 V, these transistors exhibit hysteresis behavior similar to the reported behavior of fully depleted SOI-MOSFETs. Our results also show a gate voltage controlled turn-off of the drain current when the transistor is operating in the hysteresis mode. We have analyzed this behavior in vertical n-MOSFETs using 2-D device simulation and our results show a threshold value for the hole concentration across the source-channel junction which is required for the forward biasing of this junction. For a transistor operating in the hysteresis mode, we show that the potential barrier height for electron injection across the source-channel junction increases for increasing negative gate voltages during retrace. This results in a gate controlled turn-off of the drain current for SOI and vertical n-MOSFETs operating in the regenerative mode.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.502132