Hydrogen desorption from 6H-SiC(0001) surfaces during graphitization
Desorption of hydrogen from 6H-SiC(0001) has been systematically studied during graphitization. The surface structure was controlled by thermal desorption of silicon at high temperatures in an ultrahigh vacuum and was characterized by low energy diffraction and Auger electron spectroscopy. The tempe...
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| Published in | Applied physics letters Vol. 95; no. 9 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
31.08.2009
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| Online Access | Get full text |
| ISSN | 0003-6951 1077-3118 |
| DOI | 10.1063/1.3223598 |
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| Summary: | Desorption of hydrogen from 6H-SiC(0001) has been systematically studied during graphitization. The surface structure was controlled by thermal desorption of silicon at high temperatures in an ultrahigh vacuum and was characterized by low energy diffraction and Auger electron spectroscopy. The temperature of the dominant peak in the hydrogen desorption spectrum was found to shift from 670 to 490 K between 3×3 and 3×3R30° reconstructions. The shift can be assigned to a change of the adsorption sites from silicon to carbon. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3223598 |