26-GHz etched-groove silicon permeable base transistor

A report is presented on the fabrication of etched-groove silicon permeable base transistors (PBTs) that reveal a maximum frequency of oscillation and a unity-current-gain cutoff frequency of 26 GHz, the latter being the highest value yet reported for Si PBTs. This performance was achieved with mush...

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Bibliographic Details
Published inIEEE electron device letters Vol. 12; no. 10; pp. 556 - 558
Main Authors Gruhle, A., Badoz, P.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1991
Subjects
Cutoff frequency
Doping
Etching
Fabrication
Fingers
Gold
Numerical simulation
Passivation
Platinum
Silicon
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Summary:A report is presented on the fabrication of etched-groove silicon permeable base transistors (PBTs) that reveal a maximum frequency of oscillation and a unity-current-gain cutoff frequency of 26 GHz, the latter being the highest value yet reported for Si PBTs. This performance was achieved with mushroom-shaped source fingers, a structure that permits both the passivation of the Si finger sidewalls and the reinforcement of the platinum gate with a gold overlayer. The doping distribution was optimized with two-dimensional numerical simulations, parasitic capacitances were reduced using a multilayer polyimide structure, and deep-UV optical lithography was used to fabricate PBTs with 0.2- to 0.4- mu m finger widths.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.119187